@article{WANG2010, 
author = {Xin WANG and Siqiang FAN and Hui ZHAO and Lin LIN and Qiang FANG and He TANG and Albert WANG},
title = {Whole-Chip ESD Protection Design for RF and AMS ICs},
year = {2010},
journal = {Tsinghua Science and Technology},
volume = {15},
number = {3},
pages = {265-274},
keywords = {electrostatic discharge (ESD), ESD protection, radio frequency (RF), parasitic capacitance},
url = {https://www.sciopen.com/article/10.1016/S1007-0214(10)70060-2},
doi = {10.1016/S1007-0214(10)70060-2},
abstract = {As integrated circuits (IC) technologies advance into very-deep-sub-micron (VDSM), electrostatic discharge (ESD) failure becomes one of the most devastating IC reliability problems and on-chip ESD protection design emerges as a major challenge to radio frequency (RF), analog, and mixed-signal (AMS) IC designs. This paper reviews key design aspects and recent advances in whole-chip ESD protection designs for RF/AMS IC applications in CMOS technologies.}
}