@article{CHEN2010, 
author = {Guang CHEN and Xin WANG and Siqiang FAN and He TANG and Lin LIN and Albert WANG},
title = {ESD-Induced Noise to Low Noise Amplifier Circuits in BiCMOS},
year = {2010},
journal = {Tsinghua Science and Technology},
volume = {15},
number = {3},
pages = {259-264},
keywords = {electrostatic discharge (ESD) protection, low-noise amplifier (LNA), noise figures (NFs), radio frequency (RF), integrated circuits (IC)},
url = {https://www.sciopen.com/article/10.1016/S1007-0214(10)70059-6},
doi = {10.1016/S1007-0214(10)70059-6},
abstract = {Electrostatic discharge (ESD) induced parasitic effects have serious impacts on performance of radio frequency (RF) integrated circuits (IC). This paper discusses a comprehensive noise analysis procedure for ESD protection structures and their negative influences on RF ICs. Noise figures (NFs) of commonly used ESD protection structures and their impacts on a single-chip 5.5 GHz low-noise amplifier (LNA) circuit were depicted. A design example in 0.18 μm SiGe BiCMOS was presented. Measurement results confirm that significant noise degradation occurs in the LNA circuit due to ESD-induced noise effects. A practical design procedure for ESD-protected RF ICs is provided for real-world RF IC optimization.}
}