@article{ZHOU2011, 
author = {Yunbo ZHOU and Yu YANG and Yueer SHAN and Huafeng CAO and Bing YANG and Zongguang YU},
title = {Ultra-low Power CMOS Front-End Readout ASIC for Portable Digital Radiation Detector},
year = {2011},
journal = {Tsinghua Science and Technology},
volume = {16},
number = {2},
pages = {157-163},
keywords = {charge sensitive, shaper, readout circuit, weak inversion region, nested feedback loop},
url = {https://www.sciopen.com/article/10.1016/S1007-0214(11)70024-4},
doi = {10.1016/S1007-0214(11)70024-4},
abstract = {An ultra-low power complementary metal-oxide-semiconductor (CMOS) front-end readout ASIC was developed for a portable digital radiation detector. The ASIC having a charge sensitive amplifier and a semi-Gaussian pulse-shaper was produced using the CSMC 0.5 μm DPDM process. The ENC noise of 363 e at 0 pF with a noise slope of 23 e/pF complies with the stringent low noise requirements. The peaking time was 250 ns at a 100 mV/fC conversion gain (detector capacitance is 20 pF). By operating this front-end readout ASIC in the weak inversion region, the ultra-low power dissipation is only 0.1 mW/channel (3.0 V). Simulations and test results suggest that this design gives lower power consumption than the front-end readout ASICs working in the strong inversion and is appropriate for the portable digital radiation detectors.}
}