@article{Li2026, 
author = {Chengyuan Li and Chen Yan and Guanran Wang and Yu Bai and Hanwen Wang and Xuanzhe Sha and Meng Zhang and Naijie Ren and Hong Wang and Dongming Sun and Yu Duan and Zheng Vitto Han and Yaning Wang},
title = {Watt-level transistors based on molybdenum disulphide},
year = {2026},
journal = {Nano Research},
keywords = {field effect transistors, flexible device, molybdenum disulphide, Watt-level, power switches},
url = {https://www.sciopen.com/article/10.26599/NR.2026.94908826},
doi = {10.26599/NR.2026.94908826},
abstract = {Two-dimensional (2D) semiconductor devices hold great promise in specialized operating regimes including radio-frequency, high-temperature, and cryogenic conditions – yet their potential for power handling has received little emphasis, so far. Here we report a molybdenum disulphide (MoS2) device design that strategically selects the channel width (W) and length (L) to distribute current density and mitigate self-heating, enabling operation at a source-drain bias Vds of 10 V and a drain current Ids of 0.1 A, while maintaining an on/off ratio of 105. This corresponds to sustained dissipation P = IdsVds~1 W, and highlights a pathway for watt-level switching in van der Waals electronics. We demonstrate a sensor circuit that uses our watt-level MoS2 transistors to function as a step-down converter and a switching device. Further, a proof-of-concept on flexible substrates is presented. Our findings mark a step change in 2D power electronics, paving the way for higher-voltage devices compatible with flexible substrates and, ultimately, wearable and conformal power systems.}
}