@article{Bai2026, 
author = {Yujie Bai and Yuhao Kong and Yang Du and Jianhong Zhang and Siling Liu and Mouyuan Liu and Shiyu Chen and Chenyang Zha and Zhengong Meng and Linghai Zhang and Jianhong Yang and Huifang Ma and Xiangdong Yang},
title = {Vapor phase growth and oxygen vacancy engineering of ultrathin 2D Co3O4 nanosheets for self-rectifying memristors},
year = {2026},
journal = {Nano Research},
keywords = {two-dimensional (2D) materials, chemical vapor deposition, nanosheets, nonlayered metal oxides, self-rectifying memristors},
url = {https://www.sciopen.com/article/10.26599/NR.2026.94908794},
doi = {10.26599/NR.2026.94908794},
abstract = {Two-dimensional (2D) materials show great promise for building next-generation memristors. However, their application in self-rectifying memristors (SRMs)—crucial for suppressing sneak-path currents in high-density arrays—is still underexplored. In this work, we address this gap by developing ultrathin non-layered Co3O4 nanosheets through a vapor-phase growth strategy and precisely engineering their oxygen vacancies for high-performance SRMs. Our synergistic approach, combining salt-assisted vapor-liquid-solid, hydrate-assisted, and spatial confinement methods, enables the controlled synthesis of high-quality Co3O4 nanosheets as thin as 0.46 nm with a single-atomic-layer thickness. We demonstrate that magnetically driven rapid thermal annealing (MD-RTA) effectively increases the oxygen vacancy (Ov) concentration from 15.15% to 33.15%, as quantitatively confirmed by XPS, Raman, and KPFM. The resulting memristor exhibits excellent self-rectifying resistive switching behavior, with a high rectification ratio exceeding 10⁴ and a large ON/OFF ratio over 104. The device also achieves high switching uniformity (coefficient of variation, Cv = 0.0979), stable cycling endurance over 100 DC cycles, and room-temperature operation. This study provides a reliable synthesis route for 2D non-layered materials and highlights defect engineering as an effective strategy for developing advanced in-memory computing devices with inherent crosstalk immunity.}
}