TY - JOUR AU - Chang, Hui AU - Luo, Cheng AU - Gu, Pengrong AU - Fan, Wenjuan AU - Lu, Jin AU - Fu, Hao AU - Li, Yufeng AU - Wang, Li AU - Xiao, Chuanhai AU - Li, Hu AU - Jiang, Zhiqiang PY - 2026 TI - Harnessing microenvironment of S-scheme heterostructure with dot-on-surface morphology and sulfur vacancies for efficient photocatalytic hydrogen evolution and tetracycline degradation JO - Nano Research SN - 1998-0124 SP - 94908765 VL - 19 IS - 8 AB - Reasonable fabrication of S-scheme heterojunction presents a positive outlook to boost photocatalytic hydrogen (H2) production and degradation of antibiotics, while facing enormous challenges like rapid charge separation and catalytic reaction microdomain regulation. Herein, we deliberately anchor ultra-small nanodots VS-ZnSP with sulfur vacancies (VS) derived from Zn-metal-organic framework (MOF) onto ZnIn2S4 (ZIS) nanosheets to rationally construct an S-scheme heterostructure ZIS/VS-ZnSP, achieving markedly enhanced photocatalytic H2 evolution and tetracycline (TC) removal activity, with a high photo-removal TC efficiency of 98.92% within 60 min and an optimal photocatalytic H2-generation rate of 5.31 mmol·g−1·h−1. The existence of VS on VS-ZnSP, and the constructed dot-on-surface morphology of ZIS/VS-ZnSP are corroborated. The presence of VS enhances the built-in interface electric field owing to the widened Fermi level gap of the S-scheme heterojunction, thereby accelerating the separation of photo-generated electrons and holes. Further, dot-on-surface morphology not only optimizes adsorption and desorption behavior of H*, but also improves adsorption capacity of O2 and promotes formation of ·O2− by photo-generated electron reduction, simultaneously expediting photocatalytic H2 evolution and TC removal. This dual microenvironment modulation strategy offers a viable scenario for conscious induction of rapid transfer of interface charges and regulation of catalytic reaction microdomain, significantly reinforcing photoredox efficiency. UR - https://doi.org/10.26599/NR.2026.94908765 DO - 10.26599/NR.2026.94908765