@article{Khim2026, 
author = {Dongyoon Khim and Walid Boukhili and Jeong Min Lee and Azati Daniel Kofi and Chee Leong Tan and Huabin Sun and Zhihao Yu and Kang-Jun Baeg},
title = {Low-power monofilament-based semiconducting single-walled carbon nanotube solid-state electrolyte gated transistors for scalable woven electronics},
year = {2026},
journal = {Nano Research},
volume = {19},
number = {8},
pages = {94908702},
keywords = {s-SWCNTs, solid-state electrolyte, fiber transistor, low voltage, wearable electronics},
url = {https://www.sciopen.com/article/10.26599/NR.2026.94908702},
doi = {10.26599/NR.2026.94908702},
abstract = {The development of high-performance and low-power active components directly integrated onto fibrous substrates is essential for the realization of next-generation wearable e-textiles. Here, we demonstrate high-performance monofilament fiber-based field-effect transistors (FETs) utilizing high-purity semiconducting single-walled carbon nanotubes (s-SWCNTs) and solid-state electrolyte gate dielectrics. To overcome the challenges of patterning on curvilinear fiber surfaces, we developed a fine-thread shadow mask technique, enabling the precise definition of micro-scale channel gaps without complex photolithography. The s-SWcNTs, isolated via a selective conjugated polymer wrapping method, exhibited robust ambipolar transport and high purity, as confirmed by ultraviolet–visible–near infrared (UV–Vis–NIR) and Raman spectroscopy. By integrating a [EMIM][BF4]/PVDF-HFP ([EMIM][BF4] = 1-ethyl-3-methylimidazolium tetrafluoroborate, PVDF = polyvinylidene fluoride, and HFP = hexafluoropropylene) solid-state electrolyte, the monofilament fiber-based FETs achieved ultra-low voltage operation (< 1 V) with high areal capacitance (> 1.05 µF·cm−2). The resulting fiber transistors exhibited a high hole mobility of 14.7 cm2·V−1·s−1 and a transconductance (gm/W) of 0.3 S·m−1. This synergistic approach combining textile-compatible fabrication and high-mobility nanomaterials provides a scalable pathway for energy-efficient and in-cloth signal processing and logic circuitry.}
}