@article{Cheng2026, 
author = {Jin Cheng and Hongye Wang and Xinwei Xu and Naichao Chen and Zhan Zeng and Xiaoyu Li and Biao Guo and Binfeng Zhao and Hong Wang},
title = {Negative thermal expansion ScF3 ceramic for electronic packaging applications},
year = {2026},
journal = {Journal of Materiomics},
volume = {12},
number = {2},
keywords = {Negative thermal expansion, Microwave, Electronic packaging, Cold sintering},
url = {https://www.sciopen.com/article/10.1016/j.jmat.2025.101126},
doi = {10.1016/j.jmat.2025.101126},
abstract = {To meet the demands of miniaturization and integration in modern electronic packaging, developing materials with low coefficient of thermal expansion (CTE) is essential to reduce thermal stress and enhance device reliability. In this study, the dense negative thermal expansion ceramic ScF3 was prepared with a CTE of −8.86 × 10−6/℃. The ScF3 ceramic was cold sintered at 150 ℃, exhibiting a low permittivity of 5.3 and a high quality factor (Q×f) of 14,700 GHz. By incorporating ScF3 to the hexagonal boron nitride (BN) ceramic, the CTE of ScF3—BN composite ceramic was adjusted to 3.36 × 10−6/℃, establishing compatibility with silicon-based chips. And finite element simulations verified that ScF3—BN composite significantly reduces thermal stress compared to Li2MoO4 or Al2O3 ceramics. Furthermore, this work demonstrates the potential of cold-sintered ScF3 to regulate thermal expansion in packaging substrates, paving the way for improved performance in next-generation electronic devices.}
}