@article{Li2026, 
author = {Shuping Li and Shibo Gong and Jinlin Yang and Dongdong Deng and Zhongshuo Xia and Yuxiang Nie and Chao Liu and Jun Ouyang and Minghua Tang and Yongguang Xiao},
title = {Enhancing the ferroelectricity of highly (001) oriented lanthanum-doped hafnium oxide films prepared by pulsed laser deposition},
year = {2026},
journal = {Nano Research},
volume = {19},
number = {6},
pages = {94908581},
keywords = {La-doped HfO2, CeO2−x, interface engineering, ferroelectricity},
url = {https://www.sciopen.com/article/10.26599/NR.2026.94908581},
doi = {10.26599/NR.2026.94908581},
abstract = {Hafnium oxide (HfO2)-based ferroelectrics hold great promise for logic and non-volatile memory devices due to their scalability. However, the performance of most HfO2 films is limited by a predominant (111) orientation, which yields a lower out-of-plane polarization compared to the (001) orientation. To promote the high polarization (001) orientation, we propose a synergistic interface engineering strategy utilizing non-stoichiometric cerium oxide (CeO2−x) as both a seed and a capping layer. This approach effectively regulates the nucleation and growth of La-doped HfO2 (HLO) films, promoting a (001)O/(010)O mixed preferred orientation and the formation of 90° ferroelectric domains. The film achieves a significantly enhanced remnant polarization (Pᵣ) of 37.6 μC/cm2. This work provides a feasible interfacial strategy for boosting the ferroelectric performance of HfO2-based materials, advancing their application in next-generation memory.}
}