@article{Niu2026, 
author = {Wencheng Niu and Pengcheng Zeng and Zhengdao Xie and Tong Bu and Lin Tang and Sen Zhang and Bei Jiang and Xu Zhao and Xitong Hong and Xuming Zou and Xinpei Duan and Lei Liao and Xingqiang Liu},
title = {High-performance 2D semiconductor floating gate transistors incorporating an ultrathin oxygen layer},
year = {2026},
journal = {Nano Research},
volume = {19},
number = {6},
pages = {94908578},
keywords = {van der Waals heterostructures, logic gates, floating gate transistor, native HfOx oxides},
url = {https://www.sciopen.com/article/10.26599/NR.2026.94908578},
doi = {10.26599/NR.2026.94908578},
abstract = {Depositing high-quality tunneling layers for two-dimensional (2D) floating gate transistors remains challenging, as it requires precise process control and parameter optimization. Herein, we fabricated a floating gate structure incorporating a high-quality hafnium oxide (HfOx) tunneling layer achieved via ozone-induced oxidation of HfS2 flakes. This process forms a nano-confined elemental oxygen layer at the tunneling layer/channel interface, which effectively suppresses leakage current. As a result, the WSe2 floating gate transistor exhibits exceptional memory performance, including a high programming/erasing ratio, a long retention time (105 s), multibit storage capacity, and reliable low temperature operation. Leveraging its programmable characteristics and robust performance, we demonstrated logic-in-memory operations with functional NOT, XNOR, and XOR gates. This rationally designed floating gate structure offers a promising approach for high-performance memory devices and logic-in-memory systems.}
}