@article{Fan2026, 
author = {Xiang-Bing Fan and Donghui Yu and Di Zhang and Xu Yuan and Shan Yu and Xiaofei Zhao and Haoze Yang and Haoyu Yang and Dong Li and Zhuo Chen and Yanzhao Li},
title = {Thermal engineering of ZnMgO as electron transport layers for high-reliability quantum dot light-emitting diodes},
year = {2026},
journal = {Nano Research},
volume = {19},
number = {7},
pages = {94908564},
keywords = {nanocrystal, electroluminescence, quantum dot, positive aging, quantum dot light-emitting diode (QLED), ZnMgO},
url = {https://www.sciopen.com/article/10.26599/NR.2026.94908564},
doi = {10.26599/NR.2026.94908564},
abstract = {The commercialization of self-emissive quantum dot light-emitting diode (QLED) faces several critical challenges. A primary obstacle is the reliance on acid-induced positive aging protocols using UV-curable resin to enhance device efficiency and brightness. However, this in-situ aging process is difficult to control, which undermines device fabrication reliability such as causing non-uniform luminance, accelerating degradation and introducing batch-to-batch variations, thereby impeding industrial scalability. Herein, we propose a solution-processed thermal treatment strategy to modify ZnMgO as electron transport layers in QLEDs. Characterization reveals that thermal treatment of ZnMgO leads to a 25% decrease in oxygen vacancies, which reduces the requirement for the positive aging process. Furthermore, the approximately 30% increase in nanoparticle size of thermally treated ZnMgO improves structural stability. Consequently, the resulting QLEDs exhibit enhanced electroluminescence uniformity, achieve a high luminance exceeding 60,000 cd/m2 at 3 V, and triple their operational lifetime (T95@1000 cd/m2) to approximately 20,000 h. The proposed thermal engineering protocol for ZnMgO provides a viable route toward reliable industrial-scale production of high-performance QLED displays.}
}