@article{Li2026, 
author = {Qian Li and Kun Ye and Mengmeng Yang and Junxin Yan and Tianle Zeng and Qi Gao and Yang Lv and Yihan Gao and Qingqing Yang and Ruiqi Chen and Yang Gao and Zhaofei Sun and Bo He and Peng Xiao and Wei Ye and Anmin Nie and Zhongyuan Liu and Shouguo Wang},
title = {Highly anisotropic dual-heterostructure for multifunctional solar-blind polarization-sensitive photodetectors},
year = {2026},
journal = {Nano Research},
volume = {19},
number = {3},
pages = {94908448},
keywords = {WS2/GaPS4 dual-heterostructure, type-I band alignment, anisotropic optical response, solar-blind ultraviolet photodetector, high-resolution polarization imaging},
url = {https://www.sciopen.com/article/10.26599/NR.2026.94908448},
doi = {10.26599/NR.2026.94908448},
abstract = {Solar-blind ultraviolet photodetectors based on two-dimensional van der Waals heterostructures have emerged as indispensable components for high-precision warning systems, environmental monitoring systems, information encryption, and optical communication. However, the widespread use of solar-blind ultraviolet photodetectors is still constrained by the simultaneous lack of ultralow dark current, high specific photoresponse, sub-microsecond response time, and intrinsic polarization-sensitive photoresponse. Herein, a dual-heterostructure field-effect transistor composed of the ultra-wide bandgap semiconductor GaPS4 and WS2 nanosheets was fabricated. The WS2/GaPS4 dual-heterostructure devices exhibit high spike barriers at the dual-heterostructure interface owing to type-I band alignment, which can completely suppress charge transfer. Furthermore, the device exhibits an outstanding performance in the solar-blind ultraviolet (UV) region, stemming from the fast carrier separation and transfer enabled by the built-in electric fields at the dual-heterostructure interface. Critically, the two-fold rotational symmetry (C2) of GaPS4 breaks the original three-fold rotational symmetry (C3) of WS2 to simultaneously achieve unexpected linearly polarized Raman and anisotropic absorptions at the heterostructure interface. Moreover, the WS2/GaPS4 dual-heterostructure photodetector possesses high-resolution polarization imaging capability under 255 nm illumination owing to dichroic ratios as high as 3.4. These results suggest that the novel two-dimensional dual-heterostructure provides a foundation for developing next-generation polarization-sensitive multifunctional photodetectors.}
}