@article{Liu2026, 
author = {Zirong Liu and Shengyuan Peng and Qingyu Zhang and Mian Li and Yukun Xiao and Yuan Gao and Fangfang Ge and Xinwei Wang and Qing Huang and Jianming Xue},
title = {Fabrication of high-responsivity FET photodetector with Ti3C2Cl2 MXene irradiated with 100 keV N ions},
year = {2026},
journal = {Nano Research},
volume = {19},
number = {6},
pages = {94908342},
keywords = {band gap, MXene, photodetector, ion irradiation},
url = {https://www.sciopen.com/article/10.26599/NR.2026.94908342},
doi = {10.26599/NR.2026.94908342},
abstract = {MXene has attracted intense attention in optoelectronic photodetectors due to its outstanding electrical conductivity and tunable electronic properties. By using the Ti3C2Cl2 MXene irradiated with 100 keV N ions, a high-performance field-effect transistor (FET) photodetector was achieved and exhibited broadband photoresponse across the ultraviolet–visible–near infrared ray (UV–Vis–NIR) range. The responsivities of these FET photodetectors were as high as 5.3 × 104, 8.5 × 105, 3.3 × 104, and 2.8 × 105 A/W under 360, 550, 750, and 1060 nm light illumination, respectively, which are approximately two orders of magnitude higher than the other MXene-based photodetectors. The remarkable performance of the Ti3C2Cl2 FET photodetector is attributed to synergistic effect of band gap and photoconductive gain. Besides, the ion fluence has significant influence on the photoresponse of the Ti3C2Cl2 FET photodetector, and there exists an optimized ion fluence to obtain the highest responsivity. These findings highlight a controllable strategy for introducing band gap in MXenes and pave the way for their application in next-generation optoelectronic devices.}
}