@article{Park2025, 
author = {Joo Hyung Park and Yonghee Jo and Ara Cho and Inyoung Jeong and Jin Gi An and Kihwan Kim and Seung Kyu Ahn and Donghyeop Shin and Jun-Sik Cho},
title = {Enhancement of Cd-Free All-Dry-Processed Cu(In1-x,Gax)Se2 Thin-Film Solar Cells by Simultaneous Adoption of an Enlarged Bandgap Absorber and Tunable Bandgap Zn1-xMgxO Buffer},
year = {2025},
journal = {Energy & Environmental Materials},
volume = {8},
number = {1},
keywords = {atomic layer deposition, conduction band offset engineering, Cu(In1-x,Gax)Se2 solar cell, ZnMgO buffer, ZnS heterojunction interface passivation},
url = {https://www.sciopen.com/article/10.1002/eem2.12796},
doi = {10.1002/eem2.12796},
abstract = {Attempts to remove environmentally harmful materials in mass production industries are always a major issue and draw attention if the substitution guarantees a chance to lower fabrication cost and to improve device performance, as in a wide bandgap Zn1-xMgxO (ZMO) to replace the CdS buffer in Cu(In1-x,Gax)Se2 (CIGSe) thin-film solar cell structure. ZMO is one of the candidates for the buffer material in CIGSe thin-film solar cells with a wide and controllable bandgap depending on the Mg content, which can be helpful in attaining a suitable conduction band offset. Hence, compared to the fixed and limited bandgap of a CdS buffer, a ZMO buffer may provide advantages in Voc and Jsc based on its controllable and wide bandgap, even with a relatively wider bandgap CIGSe thin-film solar cell. In addition, to solve problems with the defect sites at the ZMO/CIGSe junction interface, a few-nanometer ZnS layer is employed for heterojunction interface passivation, forming a ZMO/ZnS buffer structure by atomic layer deposition (ALD). Finally, a Cd-free all-dry-processed CIGSe solar cell with a wider bandgap (1.25 eV) and ALD-grown buffer structure exhibited the best power conversion efficiency of 19.1%, which exhibited a higher performance than the CdS counterpart.}
}