@article{Zhu2026, 
author = {Yushan Zhu and Lei Yin and Jiahui Ding and Zijia Liu and Xiaolin Zhang and Yiling Yu and Ruiqing Cheng and Baoxing Zhai and Yao Wen and Hao Wang and Lanqi Zhang and Jun He},
title = {3D integration of van der Waals high-κ dielectrics and semiconductors for low-power CFETs},
year = {2026},
journal = {Nano Research},
volume = {19},
number = {7},
pages = {94908307},
keywords = {two-dimensional (2D) Bi2TeO5, high-κ dielectrics, van der Waals epitaxy, field-effect transistors, low-power electronics},
url = {https://www.sciopen.com/article/10.26599/NR.2025.94908307},
doi = {10.26599/NR.2025.94908307},
abstract = {Atomically thin two-dimensional (2D) van der Waals (vdW) layered semiconductors with dangling-bond-free surfaces and excellent electronic properties are considered as alternative channel materials to address the challenges faced by the miniature transistors at next-generation technology nodes. However, the scarcity of high-dielectric-constant (κ) vdW single-crystalline gate dielectrics that are well compatible with them poses an obstacle to the practical applications of 2D semiconductors. Here, we report the synthesis of high-κ vdW Bi2TeO5 single crystals via chemical vapor deposition, as well as their applications as gate dielectrics. The as-grown vdW Bi2TeO5 shows in-plane ferroelectricity, featuring a high Curie temperature and a remarkable dielectric constant (κ ≈ 48), which is currently the highest value reported for various vdW dielectrics. The 2D semiconductor-based transistors gated by Bi2TeO5 crystal achieve an on-off current ratio exceeding 107, a near-Boltzmann-limit subthreshold swing, and a low gate leakage current. Furthermore, the three-dimensional-stacked complementary field-effect transistor inverters are constructed by integrating 2D vdW semiconductors and dielectrics, and exhibit a voltage gain of 4 and a power consumption of 193 pW at a low supply voltage of 0.3 V. Our work demonstrates that 2D vdW Bi2TeO5 is a promising high-κ single-crystalline gate dielectric and opens up a new opportunity for highly scalable, low-power 2D electronics.}
}