@article{SUN2023, 
author = {Jiejie SUN and Chao WANG and Jiawei LI and Chuanpeng JIANG and Kaihua CAO and Hui SHI and Youguang ZHANG and Weisheng ZHAO},
title = {Research progress of anti-irradiation MRAM},
year = {2023},
journal = {Journal of National University of Defense Technology},
volume = {45},
number = {6},
pages = {174-195},
keywords = {irradiation, magnetic tunnel junction, single event effect, magnetic random access memory, total ionizing dose},
url = {https://www.sciopen.com/article/10.11887/j.cn.202306020},
doi = {10.11887/j.cn.202306020},
abstract = {The novel non-volatile MRAM (magnetic random access memory) has the advantages of fast read and write speed, long data retention time and low power consumption, which attracts wide attention from researchers. Its excellent anti-irradiation capabilities are explored in depth, and further applications in aerospace and other fields are expected. The industrial development, technological changes and applications of MRAM were reviewed, the mature MRAM products of recent years were listed, and the advantages and disadvantages of different generations of MRAM were analyzed. The radiation effects of MTJ(magnetic tunnel junction) and read/write circuit based CMOS (complementary metal oxide semiconductor) were discussed. The recent achievements in anti-radiative hardening design for MRAM were summarized. The development prospect of anti-irradiation MRAM in aerospace field and even nuclear energy field was prospected.}
}