@article{Li2026, 
author = {Dong Li and Yawen Wang and Wanyu Lu and Xinpeng Wang and Chang Liu and Haseeb Ur Rehman and Bo Zhao and Weijing Shao and Yu Wang and Oleksandr Ivasenko and Yinghui Sun and Yandong Wang and Lin Jiang},
title = {Nanoparticles-array-air spacer passivated memristor with high on/off ratio and low reset current density},
year = {2026},
journal = {Nano Research},
volume = {19},
number = {3},
pages = {94908111},
keywords = {self-assembly, nanoparticle, resistive random-access memory (ReRAM), high on/off ratio, low reset current},
url = {https://www.sciopen.com/article/10.26599/NR.2025.94908111},
doi = {10.26599/NR.2025.94908111},
abstract = {Non-volatile resistive random-access memory (ReRAM) is a promising candidate for next-generation information storage, such as radiation-resistant memory modules and multifunctional memristor for sensing, data storage, and computing. However, ReRAM faces critical challenges in simultaneously achieving high on/off ratios and low reset current density due to conflicting material requirements that demand both high electrical conductivity and low thermal conductivity. Herein, we propose a novel nanoparticles (NPs)-array-air spacer (NAAS) passivated strategy to resolve the inherent electrical-thermal conductivity trade-off in ReRAM design. Specifically, we demonstrated an Al/polymethyl methacrylate (PMMA)/NAAS/indium tin oxide (ITO) memristor featuring the highest on/off ratio (107) and the lowest reset current density (10−9 A/cm2 at 0.02 V read) reported to date. The Au NAAS, formed by monodisperse Au NPs self-assembled on ITO and interstitial air gaps, served as a passivated layer between ITO and suspended PMMA film. Both experimental characterization and electrical/thermal simulations confirm that such unique architecture strategically decouples the conflicting requirements by reducing overall thermal conductivity while enhancing local electrical conductivity, yielding simultaneously a record-high on/off ratio and ultralow reset current density. This spatial passivation strategy transcends conventional single-material approaches, providing a universal design paradigm for reconciling conflicting material requirements in nanoscale resistive switching devices.}
}