TY  - JOUR
AU  - Li, Dong
AU  - Wang, Yawen
AU  - Lu, Wanyu
AU  - Wang, Xinpeng
AU  - Liu, Chang
AU  - Rehman, Haseeb Ur
AU  - Zhao, Bo
AU  - Shao, Weijing
AU  - Wang, Yu
AU  - Ivasenko, Oleksandr
AU  - Sun, Yinghui
AU  - Wang, Yandong
AU  - Jiang, Lin
PY  - 2026
TI  - Nanoparticles-array-air spacer passivated memristor with high on/off ratio and low reset current density
JO  - Nano Research
SN  - 1998-0124
SP  - 94908111
VL  - 19
IS  - 3
AB  - Non-volatile resistive random-access memory (ReRAM) is a promising candidate for next-generation information storage, such as radiation-resistant memory modules and multifunctional memristor for sensing, data storage, and computing. However, ReRAM faces critical challenges in simultaneously achieving high on/off ratios and low reset current density due to conflicting material requirements that demand both high electrical conductivity and low thermal conductivity. Herein, we propose a novel nanoparticles (NPs)-array-air spacer (NAAS) passivated strategy to resolve the inherent electrical-thermal conductivity trade-off in ReRAM design. Specifically, we demonstrated an Al/polymethyl methacrylate (PMMA)/NAAS/indium tin oxide (ITO) memristor featuring the highest on/off ratio (107) and the lowest reset current density (10−9 A/cm2 at 0.02 V read) reported to date. The Au NAAS, formed by monodisperse Au NPs self-assembled on ITO and interstitial air gaps, served as a passivated layer between ITO and suspended PMMA film. Both experimental characterization and electrical/thermal simulations confirm that such unique architecture strategically decouples the conflicting requirements by reducing overall thermal conductivity while enhancing local electrical conductivity, yielding simultaneously a record-high on/off ratio and ultralow reset current density. This spatial passivation strategy transcends conventional single-material approaches, providing a universal design paradigm for reconciling conflicting material requirements in nanoscale resistive switching devices.
UR  - https://doi.org/10.26599/NR.2025.94908111
DO  - 10.26599/NR.2025.94908111