@article{Putze2026, 
author = {Philip Putze and Daniel Wolf and Paul Chekhonin and Alexey A. Popov and Tobias Ritschel and Axel Lubk and Jochen Geck and Bernd Büchner and Peer Schmidt and Silke Hampel},
title = {Twisted and screw dislocation-driven growth of MoSe2 nanostructures by chemical vapor transport},
year = {2026},
journal = {Nano Research},
volume = {19},
number = {1},
pages = {94908020},
keywords = {two-dimensional (2D) materials, transition metal dichalcogenides, screw dislocation, twisted MoSe2 nanostructures, chemical vapor transport (CVT), thermodynamic CVT simulation},
url = {https://www.sciopen.com/article/10.26599/NR.2025.94908020},
doi = {10.26599/NR.2025.94908020},
abstract = {Twisted multilayers of two-dimensional materials attract widespread research interest due to their intriguing electronic and optical properties related to their chiral symmetry breaking and moiré effects. The two-dimensional transition metal dichalcogenide MoSe2 is a particularly promising material for twisted multilayers, capable of sustaining moiré excitons. Here, we report on a rational bottom-up synthesis approach for twisted MoSe2 flakes by chemical vapor transport (CVT). Screw dislocation-driven growth was forced by surface-fused SiO2 nanoparticles on the substrates that serve as potential nucleation points in low supersaturation condition. Thus, crystal growth by in-situ CVT under addition of MoCl5 leads to bulk 2H-MoSe2 in a temperature gradient from 900 to 820 °C with a dwell time of 96 h. Hexagonally shaped 2H-MoSe2 flakes were grown from 710 to 685 °C with a dwell time of 30 min on SiO2@Al2O3(0001) substrates. Electron backscatter diffraction as well as electron microscopy reveals the screw dislocation-driven growth of triangular 3R-MoSe2 with individual step heights between 0.9 and 2.9 nm on SiO2@Si(100) under the same conditions. Finally, twisted MoSe2 flakes exhibiting a twist angle of 19° with respect to the [010] zone axis could be synthesized.}
}