@article{Huang2025, 
author = {Yuanyuan Huang and Yu Mao and Yanmei Deng and Mengyang Wang and Wenjian Chan and Ziyang Ren and Ening Gu and Xianzhong Lin and Guowei Yang},
title = {Suppressing back-interface recombination in CZTSSe solar cells via SiO2 nanoparticle-induced discrete local contacts},
year = {2025},
journal = {Nano Research},
volume = {18},
number = {10},
pages = {94907907},
keywords = {SiO2 nanoparticles, Cu2ZnSn(S,Se)4 (CZTSSe) solar cells, discrete local contact, back interface passivation},
url = {https://www.sciopen.com/article/10.26599/NR.2025.94907907},
doi = {10.26599/NR.2025.94907907},
abstract = {The severe back interface recombination remains a major performance limiting factor in Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. In this work, SiO2 nanoparticles deposited on Mo substrate by spin-coating were used to create discrete local contact points to passivate the back interface. Systematic investigation of nanoparticle size reveals that optimized SiO2 incorporation enhances absorber crystallinity, reduces interfacial defect density, and suppresses detrimental [2CuZn + SnZn] deep-level clusters. Meanwhile, it can effectively inhibit nanoparticle agglomeration while maintaining optimal hole-transport distances, thereby obtaining a more efficient porous insulator contact (PIC) passivation structure. We propose that the passivation mechanism involves carrier recombination suppression through minimized defective contact area, thus improving the back contact quality. Consequently, the power conversion efficiency of the ultrathin CZTSSe solar cells increases from 9.03% to 10.72%, offering a viable approach for back-contact engineering.}
}