@article{Feng2025, 
author = {Yibo Feng and Pavel Krasnov and Min Yang and Menglin Li and Alina Boldyreva and Kirill Boldyrev and Yangyang Ju and Haizheng Zhong},
title = {Gas-initiated chemical alterations in ZnMgO electron transport layer: Key gas instability drivers in quantum-dot light-emitting diodes},
year = {2025},
journal = {Nano Research},
volume = {18},
number = {9},
pages = {94907649},
keywords = {processing stability, gas-induced surface reactions, open-air fabrication of quantum-dot light-emitting diodes (QLEDs), ZnMgO electron transport layer (ETL)},
url = {https://www.sciopen.com/article/10.26599/NR.2025.94907649},
doi = {10.26599/NR.2025.94907649},
abstract = {The open-air fabrication of quantum-dot light-emitting diodes (QLEDs) shows great potential for scalable manufacturing. However, the processing stability of QLED devices remains a fundamental barrier to their industrialization. This study investigates the gas-related stability of QLEDs based on the ZnMgO electron transport layer (ETL). By analyzing the current density–voltage (J–V) characteristics of QLEDs and the corresponding sub-devices of functional layers in different gas environments, we demonstrate that the ZnMgO ETL plays a critical role in determining the gas-related stability of QLEDs. Further characterizations and density functional theory (DFT) calculations indicate that gas-induced surface reactions—particularly modifications to surface states and the formation of stable ZnMgO/OH—are the primary causes of performance degradation of QLEDs.}
}