TY  - JOUR
AU  - Feng, Yibo
AU  - Krasnov, Pavel
AU  - Yang, Min
AU  - Li, Menglin
AU  - Boldyreva, Alina
AU  - Boldyrev, Kirill
AU  - Ju, Yangyang
AU  - Zhong, Haizheng
PY  - 2025
TI  - Gas-initiated chemical alterations in ZnMgO electron transport layer: Key gas instability drivers in quantum-dot light-emitting diodes
JO  - Nano Research
SN  - 1998-0124
SP  - 94907649
VL  - 18
IS  - 9
AB  - The open-air fabrication of quantum-dot light-emitting diodes (QLEDs) shows great potential for scalable manufacturing. However, the processing stability of QLED devices remains a fundamental barrier to their industrialization. This study investigates the gas-related stability of QLEDs based on the ZnMgO electron transport layer (ETL). By analyzing the current density–voltage (J–V) characteristics of QLEDs and the corresponding sub-devices of functional layers in different gas environments, we demonstrate that the ZnMgO ETL plays a critical role in determining the gas-related stability of QLEDs. Further characterizations and density functional theory (DFT) calculations indicate that gas-induced surface reactions—particularly modifications to surface states and the formation of stable ZnMgO/OH—are the primary causes of performance degradation of QLEDs.
UR  - https://doi.org/10.26599/NR.2025.94907649
DO  - 10.26599/NR.2025.94907649