@article{Chen2025, 
author = {Xuanyu Chen and Bao Ou and Guanfu Liu and Yuxing Dai and Bin Li and Yejing Dai},
title = {Simultaneous enhancement of piezoelectric performance and Curie temperature in high-temperature Bi4Ti3O12 piezoceramics through A/B site co-doping},
year = {2025},
journal = {Journal of Advanced Ceramics},
volume = {14},
number = {5},
pages = {9221077},
keywords = {piezoelectricity, high-temperature, Bi4Ti3O12, A/B-site co-doping},
url = {https://www.sciopen.com/article/10.26599/JAC.2025.9221077},
doi = {10.26599/JAC.2025.9221077},
abstract = {For Bi4Ti3O12 (BIT) high-temperature piezoceramics, improving piezoelectric performance often comes at the expense of a reduced Curie temperature. In this study, a series of Bi4−xCexTi2.97(Cr1/3Ta2/3)0.03O12 (x = 0, 0.02, 0.04, 0.06, and 0.08) ceramics were synthesized using the solid-state reaction method, and their phase structure, microstructure, piezoelectric properties, and conduction mechanisms were systematically analyzed. By employing a B-site non-equivalent co-doping strategy and introducing Ce ions into the A-site, we achieve a synergistic increase in the piezoelectric performance, Curie temperature, and high-temperature resistivity of BIT-based ceramics. This A/B site multi-co-doping significantly enhances the electrical properties by reducing the oxygen vacancy concentration. Notably, the ceramics with x = 0.04 exhibit a high piezoelectric coefficient (d33) of 37 pC·N−1, excellent resistivity of 6.6×106 Ω·cm at 500 °C, and a high Curie temperature of 681 °C. Piezoelectric force microscopy and phase field simulation reveal that the superior piezoelectric performance arises from larger domain sizes, a stronger response to external electric fields, and a higher breakdown field strength. These findings not only position this material as a robust candidate for high-temperature applications but also provide valuable insights into the design of piezoelectric ceramics with enhanced stability and performance.}
}