@article{Chen2026, 
author = {Yushan Chen and Liuyue Xu and Yuan Wu and Liao Zhou and Yuting Wei and Zihan Zheng and Hui Li and Liang Jiang and Linmao Qian},
title = {A distinctive material removal mode in chemical mechanical polishing besides chemical bonding and mechanical plowing: Shear slipping},
year = {2026},
journal = {Friction},
volume = {14},
number = {4},
pages = {9441104},
keywords = {chemical mechanical polishing (CMP), layered material, bismuth, material removal mode, shear slipping},
url = {https://www.sciopen.com/article/10.26599/FRICT.2025.9441104},
doi = {10.26599/FRICT.2025.9441104},
abstract = {Layered materials, such as bismuth, offer exceptional properties for future integrated circuits (ICs). Research is underway to adapt these materials to conventional IC manufacturing processes, such as chemical mechanical polishing (CMP). However, the CMP of layered materials remains underexplored. This study chose bismuth as a representative material to investigate its CMP properties. The results reveal that the material removal rate (MRR) increases rapidly and stabilizes as the H2O2 concentration increases. An ultrahigh MRR exceeding 10 μm/min is achieved, which is significantly higher than the typical MRR of < 1 μm/min. A distinctive material removal mode is proposed: shear slipping. This mode differs from previously reported chemical bonding and mechanical plowing. Specifically, bismuth is oxidized by H2O2 to form a Bi2O3 surface film, which has a weak interaction with the bismuth substrate, creating a low-shear interface. Under the shearing action of the polishing pad asperities, the surface film slips relative to the substrate, which is distinct from forming and tearing chemical bonds via chemical bonding, and breaking the weakened surface in-plane via mechanical plowing. Consequently, material removal is achieved as micron-sized debris. Furthermore, the shear slipping mode may apply to other layered materials. Adding lubricants and optimizing the polishing pad may help control the removal of layered materials during CMP.}
}