@article{Hu2025, 
author = {Jianzhi Hu and Mingjie Li and Zhongyang Liu and Yingtao Ding and Yilin Sun and Zhiming Chen},
title = {Tailoring the functionalities of MoS2 field-effect transistors by an area-selective surface charge transfer doping strategy},
year = {2025},
journal = {Nano Research},
volume = {18},
number = {5},
pages = {94907360},
keywords = {molybdenum disulfide, Schottky barrier, surface doping, inverter, homojunction},
url = {https://www.sciopen.com/article/10.26599/NR.2025.94907360},
doi = {10.26599/NR.2025.94907360},
abstract = {Surface charge transfer doping (SCTD) is widely recognized as an effective and non-destructive method for modulating the electrical properties of atomically thin transition metal dichalcogenides (TMDs), capitalizing on their distinctive two-dimensional (2D) structure. Nevertheless, the challenges of achieving precise area-selective doping using conventional methods, such as dopant vaporization, have impeded the advancement of practical optoelectronic and electronic devices based on TMDs. Herein, we propose a simple and reliable area-selective SCTD strategy to facilitate transfer, doping, and encapsulation simultaneously during the polyvinyl alcohol (PVA)-assistant transfer process. The electrical performance of PVA-doped molybdenum disulfide (MoS2) field-effect transistor (FET) exhibited significant enhancement, with carrier concentrations reaching up to 1013 cm−2, on-state currents increasing to 10 μA·μm−1, and on/off ratios attaining a remarkable value of 107. Optical photothermal infrared (O-PTIR) spectroscopy was employed to elaborate the intrinsic temperature-dependent doping mechanism. The functionalization of MoS2 FETs was successfully achieved by introducing a hexagonal boron nitride (hBN) capping layer to define the doping area, enabling the creation of a homojunction with a rectification ratio of 106, an inverter fabricated within a single channel, and a Schottky barrier as low as 30.17 meV at the Au/MoS2 interface. This area-selective SCTD strategy, enabled by the PVA-assisted transfer process, offers a reliable, efficient, and economical approach for tailoring the functionalities of TMD-based devices, demonstrating substantial potential for diverse electronic applications.}
}