@article{WANG2022, 
author = {Hui WANG and Xiangping JIANG and Xianwen WANG and Xin NIE and Chao CHEN and Xiaokun HUANG and Liqiang YANG},
title = {Structural and Electrical Properties of Mg2+-doped BBTI-BIT Ceramics},
year = {2022},
journal = {Journal of Ceramics},
volume = {43},
number = {3},
pages = {421-427},
keywords = {intergrowth bismuth layered lead-free piezoelectric ceramic, piezoelectric constant, doping},
url = {https://www.sciopen.com/article/10.13957/j.cnki.tcxb.2022.03.007},
doi = {10.13957/j.cnki.tcxb.2022.03.007},
abstract = {BaBi8Ti7−xMgxO27−δ (x=0, 0.2, 0.4, 0.6, 0.8) intergrowth bismuth layered lead-free piezoelectric ceramics were prepared by using the conventional solid-state reaction method. The effect of Mg2+ on structure, electrical properties and temperature stability of the ceramics was studied. All the samples have a single phase structure. With increasing content of Mg2+, both the dielectric constant and dielectric loss showed a decreasing trend, while the impedance and activation energy increase at high temperatures. In addition, a small quantity of Mg2+ resulted in a variation in the microstructure from plate-like grains to particle-like grains, leading to an improvement in piezoelectric properties of the ceramics. The sample with x=0.60 exhibited optimum electrical properties, with Curie temperature of about 480 ℃ and piezoelectric constant (d33) of 18.8 pC·N−1, which is higher than that of the undoped sample by about 250%.}
}