@article{QUHE2023, 
author = {Ruge QUHE and Tiejun WANG},
title = {TWO-DIMENSIONAL FERROELECTRIC SEMICONDUCTORS FOR NEXT-GENERATION MEMORY AND COMPUTING},
year = {2023},
journal = {Physics and Engineering},
volume = {33},
number = {6},
pages = {98-104},
keywords = {in-memory computing, post-Moore, two-dimensional ferroelectrics, semiconductors},
url = {https://www.sciopen.com/article/10.26599/PHYS.2023.9320616},
doi = {10.26599/PHYS.2023.9320616},
abstract = {In-memory computing is a potential development direction to break through the performance and power consumption bottlenecks in the post-Moore era. Emerging two-dimensional (2D) ferroelectric semiconductors have become a research hotspot in just a few years because they combined nonvolatile ferroelectric polarization and semiconducting properties, which makes them suitable for in-memory computing. This paper, as the first part of “Advanced Computing Technologies”, introduces the historical background of in-memory computing, the physical picture of 2D ferroelectric semiconductors, and the mechanism of typical devices. This paper serves as a general introduction to the field of future computing technology. The PPT given in the appendix of this paper also serves as a useful supplement to the “Electromagnetism” chapter in university physics and other courses.}
}