TY  - JOUR
AU  - QUHE, Ruge
AU  - WANG, Tiejun
PY  - 2023
TI  - TWO-DIMENSIONAL FERROELECTRIC SEMICONDUCTORS FOR NEXT-GENERATION MEMORY AND COMPUTING
JO  - Physics and Engineering
SN  - 1009-7104
SP  - 98
EP  - 104
VL  - 33
IS  - 6
AB  - In-memory computing is a potential development direction to break through the performance and power consumption bottlenecks in the post-Moore era. Emerging two-dimensional (2D) ferroelectric semiconductors have become a research hotspot in just a few years because they combined nonvolatile ferroelectric polarization and semiconducting properties, which makes them suitable for in-memory computing. This paper, as the first part of “Advanced Computing Technologies”, introduces the historical background of in-memory computing, the physical picture of 2D ferroelectric semiconductors, and the mechanism of typical devices. This paper serves as a general introduction to the field of future computing technology. The PPT given in the appendix of this paper also serves as a useful supplement to the “Electromagnetism” chapter in university physics and other courses.
UR  - https://doi.org/10.26599/PHYS.2023.9320616
DO  - 10.26599/PHYS.2023.9320616