@article{Shi2025, 
author = {Yiming Shi and Junhua Meng and Zhengchang Xia and Jidong Huang and Wenkang Liu and Ji Jiang and Zhigang Yin and Jinxiang Deng and Xingwang Zhang},
title = {Growth modes of β-Ga2O3 on h-BN: Remote epitaxy and van der Waals epitaxy},
year = {2025},
journal = {Nano Research},
volume = {18},
number = {2},
pages = {94907129},
keywords = {β-Ga2O3, van der Waals epitaxy, heterostructures, h-BN, remote epitaxy},
url = {https://www.sciopen.com/article/10.26599/NR.2025.94907129},
doi = {10.26599/NR.2025.94907129},
abstract = {Integrating monoclinic gallium oxide (β-Ga2O3) with two-dimensional (2D) hexagonal boron nitride (h-BN) into heterostructures is of significant importance for achieving high-power device applications. The 2D-material-assisted epitaxy provides a straightforward integration method for fabricating β-Ga2O3/h-BN vertical heterostructures. In this work, the β-Ga2O3 films were deposited on both polycrystalline and single-crystalline h-BN layers with different thicknesses, and two growth modes of β-Ga2O3 films on h-BN, remote epitaxy, and van der Waals (vdW) epitaxy, were investigated. The results show that the potential of the sapphire substrate can penetrate the monolayer and bilayer h-BN to obtain the remote epitaxy of β-Ga2O3 films, regardless of the crystallinity of h-BN. The vdW epitaxy of β-Ga2O3 film can be realized on the monocrystalline h-BN substrate. Compared with the conventional and remote epitaxial β-Ga2O3 films on sapphire substrate, the vdW epitaxial β-Ga2O3 films on the single-crystalline h-BN substrate exhibit higher crystallinity. This work indicates that the 2D-material-assisted epitaxy provides a feasible scheme for the heterogeneous integration of β-Ga2O3 films.}
}