@article{He2025, 
author = {Shang He and Xiaoyu Ye and Xiaojian Zhu and Qing Zhong and Yulin Liu and Gang Li and Rui Liu and Xiaohan Meng and Yongguang Xiao and Shaoan Yan and Minghua Tang},
title = {High-performance self-rectifying memristor array based on Pt/HfO2/Ta2O5−x/Ti structure for flexible electronics},
year = {2025},
journal = {Nano Research},
volume = {18},
number = {2},
pages = {94907085},
keywords = {noise filtering, flexible electronics, crossbar array, self-rectifying memristor, tactile memory},
url = {https://www.sciopen.com/article/10.26599/NR.2025.94907085},
doi = {10.26599/NR.2025.94907085},
abstract = {Self-rectifying memristor (SRM) arrays hold tremendous potential in high-density data storage and energy-efficient neuromorphic computing. However, SRM arrays are mostly developed on rigid substrates and lack mechanical flexibility, limiting their applications in intelligent electronic skin, wearable technologies, etc. Here, we present a high-performance SRM array based on Pt/HfO2/Ta2O5−x/Ti heterojunctions, which can be fabricated on a flexible polyimides (PI) substrate and demonstrates exceptional memristive performance under bending conditions (bending radius (R) = 1 cm, rectifying ratio > 104, retention time > 104 s and endurance > 105 cycles). We demonstrate a 16 × 16 flexible memristor array offering noise filtering and data storage capabilities, which can be used to accurately process and store the signals transmitted by a pressure sensor array. This research represents an important advancement towards the realization of next-generation high-performance flexible electronics.}
}