@article{Huang2024, 
author = {Pan Huang and Xiaonan Liu and Xiao Liu and Jing Wei and Fangze Liu and Hongbo Li},
title = {One-pot synthesis of Cu:InP multishell quantum dots for near-infrared light-emitting devices},
year = {2024},
journal = {Nano Research},
volume = {17},
number = {12},
pages = {10655-10660},
keywords = {core–shell, light-emitting diodes, near-Infrared, InP quantum dots},
url = {https://www.sciopen.com/article/10.1007/s12274-024-6906-0},
doi = {10.1007/s12274-024-6906-0},
abstract = {InP quantum dots (QDs) are promising heavy-metal-free materials for next-generation solid-state lighting, covering from visible to near-infrared (NIR) range. Compared with the rapid development of visible InP QDs, the synthesis of high-performance NIR InP QDs remains to be solved. In this work, we report a simple one-pot synthesis of NIR InP QDs by controlling the Cu doping and designing a multishell structure. By replacing the conventional highly reactive phosphorus precursor with a slightly less reactive and low-cost ammonia phosphorus precursor, the nucleation process is effectively regulated for efficient Cu doping. In addition, the epitaxial growth of the ZnSe/ZnS shell further improves the stability and optical properties of InP QDs. Therefore, the synthesized Cu:InP/ZnSe/ZnS QDs have a photoluminescence quantum yield of 70% centered at 833 nm. The NIR InP light-emitting diodes exhibit a maximum radiance of 3.1 W·sr−1·m−2 and a peak external quantum efficiency of 2.71% centered at 864 nm.}
}