@article{Zhang2024, 
author = {Haiming Zhang and Mengshuang Chi and Shidai Tian and Tian Liang and Jitao Liu and Xiang Zhang and Lingyu Wan and Zhong Lin Wang and Junyi Zhai},
title = {Giant piezotronic effect in ferroelectric field effect transistor},
year = {2024},
journal = {Nano Research},
volume = {17},
number = {9},
pages = {8465-8471},
keywords = {ferroelectric field-effect transistors, piezotronics, [Pb(Mg1/3Nb2/3)O3](1−x)-[PbTiO3]x (PMN-PT), strain sensors},
url = {https://www.sciopen.com/article/10.1007/s12274-024-6849-1},
doi = {10.1007/s12274-024-6849-1},
abstract = {The piezotronics effect utilizes a piezopotential to modulate and control current in piezo-semiconductors. Ferroelectric materials, as a type of piezoelectric materials, possess piezoelectric coefficients that are significantly larger than those found in conventional piezoelectric materials. Here, we propose a strain modulated ferroelectric field-effect transistor (St-FeFET) utilizing external strain instead of gate voltage to achieve ferroelectric modulation, which eliminates the need for gate voltage. By applying a very small strain (0.01%), the St-FeFET can achieve a maximum on-off current ratio of 1250% and realizes a gauge factor (GF) of 1.19 × 106, which is much higher than that of conventional strain sensors. This work proposes a new method for realizing highly sensitive strain sensors and presents innovative approaches to the operation methods of ferroelectric field-effect transistors as well as potential applications for coupling of strain sensors and various devices across different fields.}
}