@article{He2025, 
author = {Xinjian He and Tongtong Yu and Zishuai Wu and Changhe Du and Haoyu Deng and Yongkang Zhao and Shuang Li and Yange Feng and Liqiang Zhang and Zhinan Zhang and Daoai Wang},
title = {Atomically thin MoS2 with ultra-low friction properties based on strong interface interaction},
year = {2025},
journal = {Friction},
volume = {13},
number = {4},
pages = {9440936},
keywords = {MoS2, chemical vapor deposition (CVD), ultra-low friction, ultra-thin, interface interaction},
url = {https://www.sciopen.com/article/10.26599/FRICT.2025.9440936},
doi = {10.26599/FRICT.2025.9440936},
abstract = {Atomically thin lubrication materials with anti-friction properties are crucial for reducing energy consumption and extending the service life of micro/nanoelectromechanical systems (MEMS/NEMS). However, achieving atomically thin films with ultra-low friction properties at the atomic/nanoscale even at the micrometer scale presents significant challenges. In this study, large-size and high-quality monolayer MoS2 (ML MoS2) was grown on SiO2/Si substrate by chemical vapor deposition (CVD) method. Compared with mechanically exfoliated ML MoS2, the CVD-grown ML MoS2 (CVD-MoS2) exhibits an ultra-lower friction coefficient (0.00904). Based on the stick–slip effect and Prandtl–Tomlinson (P–T) model, the reduction of puckering effect indicates stronger interaction and lower interface potential barrier in tip, CVD-MoS2, and SiO2/Si substrate system. Moreover, combining with the density functional theory calculations, the stronger interface adhesion and higher overall charge redistribution degree of CVD-MoS2 can also be used to explain its ultralow friction state. This work will provide theoretical guidance for designing ultra-thin lubricating materials with ultra-low friction properties.}
}