TY  - JOUR
AU  - Wang, Binhao
AU  - Zhao, Haidong
AU  - Li, Jianghua
AU  - Zhang, Bin
AU  - Wang, Dan
AU  - Chen, Chen
AU  - Song, Aihua
AU  - Hu, Wentao
AU  - Yu, Dongli
AU  - Xu, Bo
AU  - Tian, Yongjun
PY  - 2024
TI  - Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation
JO  - Journal of Materiomics
SN  - 2352-8478
SP  - 285
EP  - 292
VL  - 10
IS  - 2
AB  - With the advantages of eco-friendliness, low cost, and low density, Mg2(Si,Sn) solid solutions are promising candidates for thermoelectric applications. In this work, Sb-doped Mg2Si0.4Sn0.6 bulks were prepared with a combined method of solid-state reaction and high pressure synthesis, followed by spark plasma sintering. Our investigations show that Sb doping optimizes the carrier concentration, while Si/Sn alloying effectively suppresses the lattice thermal conductivity and induces a convergence of the two lowest-lying conduction bands. Additionally, numerous coherent Sn-rich nanoprecipitates are formed within micron-sized grains. All these factors contribute synergistically to improving the thermoelectric properties of Mg2Si0.4Sn0.6. The optimal Mg2(Si0.4Sn0.6)0.985Sb0.015 exhibits a power factor higher than 4 000 μW·m−1·K−2 and a lattice thermal conductivity less than 0.8 W·m−1·K−1 at temperatures higher than 600 K, leading to the highest ZT of 1.61 at 823 K. Current work demonstrates an effective approach to enhancing the thermoelectric performance of n-type Mg2X solid solutions through doping, alloying, and microstructure modification.
UR  - https://doi.org/10.1016/j.jmat.2023.06.001
DO  - 10.1016/j.jmat.2023.06.001