@article{Dong2024, 
author = {Jianqi Dong and Dongqi Zhang and Yi Ma and Daotong You and Jinping Chen and Bin Liu and Xingfu Wang and Zengliang Shi and Chunxiang Xu},
title = {Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector},
year = {2024},
journal = {Nano Research},
volume = {17},
number = {6},
pages = {5569-5577},
keywords = {plasmonic effect, GaN/ZnTe core/shell, nanopillar array, ultraviolet/visible photodetector, self-power},
url = {https://www.sciopen.com/article/10.1007/s12274-024-6477-9},
doi = {10.1007/s12274-024-6477-9},
abstract = {Nanostructure photodetectors, as the core component of optoelectronic devices, are mainly focused on the precise preparation of mixed-component nano-heterostructures and the realization of zero power consumption devices. Herein, we successfully fabricated n-GaN/p-ZnTe core/shell nanopillar array and realized self-power ultraviolet/violet photodetection. The radial heterojunction nanodevice reveals high light-dark current ratio of 104 at 0 V bias, indicating effective carriers’ separation. And more, by integrating plasmonic effect, the responsivity and detectivity of the Au nanoparticles decorated device are increased from 3.85 to 148.83 mA/W and 4.45×1011 to 2.33 × 1012 Jones under 325 nm UV light irradiation. While the rise and the fall time are decreased 1.3 times and 6.8 times under 520 nm visible light irradiation at 0 V bias. The high photocurrent gain is derived from that the oscillating high-energy hot electrons in Au nanoparticles spontaneously inject into the ZnTe conduction band to involve the photodetection process. This work presents an effective route to prepare high-performance self-power photodetector and provides a promising blueprint to realize different functional photoelectronic devices based on core/shell nanostructure.}
}