@article{Li2023, 
author = {Lu Li and Yalin Peng and Jinpeng Tian and Fanfan Wu and Xiang Guo and Na Li and Wei Yang and Dongxia Shi and Luojun Du and Guangyu Zhang},
title = {Batch fabrication of MoS2 devices directly on growth substrates by step engineering},
year = {2023},
journal = {Nano Research},
volume = {16},
number = {11},
pages = {12794-12799},
keywords = {molybdenum disulfide, atomic layer deposition, substrate step engineering, high-κ dielectric, top-gate field-effect transistor},
url = {https://www.sciopen.com/article/10.1007/s12274-023-6180-2},
doi = {10.1007/s12274-023-6180-2},
abstract = {Monolayer molybdenum disulfide (MoS2) has emerged as one of the most promising channel materials for next-generation nanoelectronics and optoelectronics owing to its atomic thickness, dangling-bond-free flat surface, and high electrical quality. Currently, high-quality monolayer MoS2 wafers are primarily grown on sapphire substrates incompatible with conventional device fabrication, and thus transfer processes to a suitable substrate are typically required before the device can be processed. Here, we demonstrate the batch production of transfer-free MoS2 top-gate devices directly on sapphire growth substrates via step engineering. By introducing substrate steps on growth substrate sapphire, high-κ dielectric layers with superior quality and uniform can be directly deposited on the epitaxially grown monolayer MoS2. For the substrate with a maximum step density of 100 μm−1, the gate capacitance can reach ~ 1.87 μF∙cm−2, while the interface trap state density (Dit) can be as low as ~ 7.6 × 1010 cm−2∙eV−1. The direct deposition of high-quality dielectric layers on grown monolayer MoS2 enables the batch fabrication of top-gate devices devoid of transfer and thus excellent device yield of > 96%, holding great promise for large-scale two-dimensional (2D) integrated circuits.}
}