@article{Han2024, 
author = {Yajie Han and Shujie Jiao and Jiangcheng Jing and Lei Chen and Ping Rong and Shuai Ren and Dongbo Wang and Shiyong Gao and Jinzhong Wang},
title = {A self-powered solar-blind UV-enhanced Bi2Se3/a-Ga2O3/p-Si heterojunction photodetector for full spectral photoresponse and imaging},
year = {2024},
journal = {Nano Research},
volume = {17},
number = {4},
pages = {2960-2970},
keywords = {Bi2Se3/a-Ga2O3/p-Si, self-powered photodetector, full spectral photoresponse, imaging},
url = {https://www.sciopen.com/article/10.1007/s12274-023-6082-3},
doi = {10.1007/s12274-023-6082-3},
abstract = {Self-powered full-spectrum photodetectors (PDs) offer numerous advantages, such as broad application fields, high precision, efficiency, and multi-functionality, which represent a highly promising and potentially valuable class of detectors for future development. However, insensitive response to solar-blind ultraviolet (UV) and complex and expensive preparation processes greatly limit their performance and practical application. In this study, a self-powered full-spectrum Bi2Se3/a-Ga2O3/p-Si heterojunction PD with high sensitivity for solar-blind UV band prepared by a simple and low-cost two-step synthesis method is presented. Experiments results reveal that the developed PD has an excellent performance, such as high sensitivity from 200 to 850 nm, and a responsivity of 1.38 mA/W as well as a detectivity of 3.22 × 1010 Jones under 254 nm light at zero bias. Additionally, the unencapsulated device displays exceptional stability and imaging capabilities. It is expected that Bi2Se3/a-Ga2O3/p-Si heterojunction PD with a simple and low-cost synthesis method has great potential for self-powered full-spectrum photodetectors.}
}