@article{Zhao2020, 
author = {Jun Zhao and Shumin Yang and Chaofan Xue and Liansheng Wang and Zhaofeng Liang and Lei Zhang and Yong Wang and Yanqing Wu and Renzhong Tai},
title = {The recent development of soft x-ray interference lithography in SSRF},
year = {2020},
journal = {International Journal of Extreme Manufacturing},
volume = {2},
number = {1},
pages = {012005},
keywords = {soft x-ray, EUV, interference lithography},
url = {https://www.sciopen.com/article/10.1088/2631-7990/ab70ae},
doi = {10.1088/2631-7990/ab70ae},
abstract = {This paper introduces the recent progress in methodologies and their related applications based on the soft x-ray interference lithography beamline in the Shanghai synchrotron radiation facility. Dual-beam, multibeam interference lithography and Talbot lithography have been adopted as basic methods in the beamline. To improve the experimental performance, a precise real-time vibration evaluation system has been established; and the lithography stability has been greatly improved. In order to meet the demands for higher resolution and practical application, novel experimental methods have been developed, such as high-order diffraction interference exposure, high-aspect-ratio and large-area stitching exposure, and parallel direct writing achromatic Talbot lithography. As of now, a 25 nm half-pitch pattern has been obtained; and a cm2 exposure area has been achieved in practical samples. The above methods have been applied to extreme ultraviolet photoresist evaluation, photonic crystal and surface plasmonic effect research, and so on.}
}