@article{Zheng2024, 
author = {Yue Zheng and Qi You and Zhentian Yin and Jian Tang and Ke Jiang and Zihao Xie and Henan Li and Cheng Han and Yumeng Shi},
title = {Optimizing 2D-metal contact in layered Tin-selenide via native oxide modulation},
year = {2024},
journal = {Nano Research},
volume = {17},
number = {4},
pages = {3014-3020},
keywords = {Cr contact, native oxide, few-layer SnSe field-effect transistors (FETs), contact resistance (Rc), Schottky barrier (SB)},
url = {https://www.sciopen.com/article/10.1007/s12274-023-6047-6},
doi = {10.1007/s12274-023-6047-6},
abstract = {The discovery of two-dimensional (2D) semiconductor has opened up new avenues for the development of short-channel field-effect transistors (FETs) with desired electrical performance. Among them, orthorhombic tin-selenide (SnSe) has garnered increasing attention due to its potential applications in a variety of electronic, optoelectronic, and thermoelectric devices. However, the realization of high-performance SnSe FETs with low contact resistance (Rc) remains a challenge. Herein, we systematically investigate the contact of few-layer SnSe FETs through the modulation of native oxide on SnSe by using different metals. It is found that chromium (Cr)-contacted devices possess the best FET performance, such as electron mobility up to 606 cm2/(V·s) at 78 K, current on/off ratio exceeding 1010, and saturation current of ~ 550 μA/μm, where a negligible Schottky barrier (SB) of ~ 30 meV and a low contact resistance of ~ 425 Ω μm are achieved. X-ray photoelectron spectroscopy (XPS) and cross-sectional electron dispersive X-ray spectroscopy (EDX) results further reveal that the improved contact arises from the Cr-induced reduction of native oxide (SnOx) to Sn, which thins the tunneling barrier for efficient electron injection. Our findings provide a deep insight into the 2D-metal contact of SnSe and pave the way for its applications in future nanoelectronics.}
}