@article{Gao2024, 
author = {Xinzhu Gao and Quan Chen and Qinggang Qin and Liang Li and Meizhuang Liu and Derek Hao and Junjie Li and Jingbo Li and Zhongchang Wang and Zuxin Chen},
title = {Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor},
year = {2024},
journal = {Nano Research},
volume = {17},
number = {3},
pages = {1886-1892},
keywords = {two-dimensional (2D) ferroelectric, heterostructure, tri-gate, polymorphic regulation, in-memory computing},
url = {https://www.sciopen.com/article/10.1007/s12274-023-5964-8},
doi = {10.1007/s12274-023-5964-8},
abstract = {Combining logical function and memory characteristics of transistors is an ideal strategy for enhancing computational efficiency of transistor devices. Here, we rationally design a tri-gate two-dimensional (2D) ferroelectric van der Waals heterostructures device based on copper indium thiophosphate (CuInP2S6) and few layers tungsten disulfide (WS2), and demonstrate its multi-functional applications in multi-valued state of data, non-volatile storage, and logic operation. By co-regulating the input signals across the tri-gate, we show that the device can switch functions flexibly at a low supply voltage of 6 V, giving rise to an ultra-high current switching ratio of 107 and a low subthreshold swing of 53.9 mV/dec. These findings offer perspectives in designing smart 2D devices with excellent functions based on ferroelectric van der Waals heterostructures.}
}