@article{Shang2023, 
author = {Yanbo Shang and Pu Wang and Lingbo Jia and Xingcheng Li and Weitao Lian and Peisen Qian and Muqing Chen and Tao Chen and Yalin Lu and Shangfeng Yang},
title = {Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer},
year = {2023},
journal = {Nano Research Energy},
volume = {2},
pages = {e9120073},
keywords = {thermal stability, electron transport layer, all-inorganic perovskite solar cells, defect passivation, fullerene derivative},
url = {https://www.sciopen.com/article/10.26599/NRE.2023.9120073},
doi = {10.26599/NRE.2023.9120073},
abstract = {All-inorganic CsPbI3–xBrx perovskite solar cells (PSCs) are advantageous in terms of high thermal stability, while its efficiency lags behind those of organic-inorganic hybrid perovskite counterparts. Defect passivations have been extensively applied for enhancing efficiency of all-inorganic PSCs, which are mainly based on univocal defect passivation of perovskite layer. Herein, we incorporated a bis-dimethylamino-functionalized fullerene derivative (abbreviated as PCBDMAM) as an interlayer between ZnO electron transport layer (ETL) and all-inorganic CsPbI2.25Br0.75 perovskite layer, accomplishing synchronous defect passivations of both layers and consequently dramatic enhancements of efficiency and thermal stability of PSC devices. Upon spin-coating PCBDMAM onto ZnO ETL, the surface defects of ZnO especially oxygen vacancies can be effectively passivated due to the formation of Zn−N ionic bonds. In addition, PCBDMAM incorporation affords effective passivation of PbI and IPb antisite defects within the atop perovskite layer as well via coordination bonding with Pb2+. As a result, the regular-structure planar CsPbI2.25Br0.75 PSC device delivers a champion power conversion efficiency (PCE) of 17.04%, which surpasses that of the control device (15.44%). Moreover, the PCBDMAM-incorporated PSC device maintains ~ 80% of its initial PCE after 600 h heating at 85 °C hot plate in N2 atmosphere, whereas PCE of the control device degrades rapidly to ~ 62% after 460 h heating under identical conditions. Hence, PCBDMAM incorporation benefited dramatic improvement of the thermal stability of PSC device.}
}