@article{Tang2022, 
author = {Zhenhua Tang and Songcheng Hu and Dijie Yao and Zeli Li and Zhigang Liu and Xiaobin Guo and Biao Lu and Jingmin Fan and Xin-Gui Tang and Sheng-Guo Lu and Ju Gao},
title = {Enhanced energy-storage density and temperature stability of Pb0.89La0.06Sr0.05(Zr0.95Ti0.05)O3 anti-ferroelectric thin film capacitor},
year = {2022},
journal = {Journal of Materiomics},
volume = {8},
number = {1},
pages = {239-246},
keywords = {PLSZT anti-Ferroelectrics, Pulsed laser deposition (PLD), Ferroelectric/ dielectric properties, Energy storage, Temperature stability},
url = {https://www.sciopen.com/article/10.1016/j.jmat.2020.12.012},
doi = {10.1016/j.jmat.2020.12.012},
abstract = {As the fundamental energy storage components in electronic systems, dielectric capacitors with high power densities were demanded. In this work, the anti-ferroelectric Pb0.89La0.06Sr0.05(Zr0.95Ti0.05)O3 (PLSZT) ceramics and thin film capacitor were successfully fabricated by a solid-state reaction route and pulsed laser deposition method, respectively. The ferroelectric, dielectric, energy-storage properties, and temperature stability of anti-ferroelectric PLSZT capacitor were investigated in detail. By compared with the PLSZT ceramic (energy storage density is 1.29 J/cm3 with an efficiency of 78.7% under 75 kV/cm), the anti-ferroelectric PLSZT thin film capacitors exhibited the enhanced energy storage density of 52.6 J/cm3 with efficiency of 67.7% under an electric field as high as 2068.9 kV/cm, and the enhanced energy-storage temperature stabilities from room temperature (RT) to more than 200 ℃ were demonstrated, and the oxygen defects mechanism and size effect were discussed. Moreover, the fast charging (~0.05 μs) and discharging (~0.15 μs) time were certified for the anti-ferroelectric PLSZT film capacitor. These findings broaden the horizon for PLSZT anti-ferroelectrics in high energy storage properties and show promising for manufacturing pulse power capacitor.}
}