TY  - JOUR
AU  - Tang, Zhenhua
AU  - Hu, Songcheng
AU  - Yao, Dijie
AU  - Li, Zeli
AU  - Liu, Zhigang
AU  - Guo, Xiaobin
AU  - Lu, Biao
AU  - Fan, Jingmin
AU  - Tang, Xin-Gui
AU  - Lu, Sheng-Guo
AU  - Gao, Ju
PY  - 2022
TI  - Enhanced energy-storage density and temperature stability of Pb0.89La0.06Sr0.05(Zr0.95Ti0.05)O3 anti-ferroelectric thin film capacitor
JO  - Journal of Materiomics
SN  - 2352-8478
SP  - 239
EP  - 246
VL  - 8
IS  - 1
AB  - As the fundamental energy storage components in electronic systems, dielectric capacitors with high power densities were demanded. In this work, the anti-ferroelectric Pb0.89La0.06Sr0.05(Zr0.95Ti0.05)O3 (PLSZT) ceramics and thin film capacitor were successfully fabricated by a solid-state reaction route and pulsed laser deposition method, respectively. The ferroelectric, dielectric, energy-storage properties, and temperature stability of anti-ferroelectric PLSZT capacitor were investigated in detail. By compared with the PLSZT ceramic (energy storage density is 1.29 J/cm3 with an efficiency of 78.7% under 75 kV/cm), the anti-ferroelectric PLSZT thin film capacitors exhibited the enhanced energy storage density of 52.6 J/cm3 with efficiency of 67.7% under an electric field as high as 2068.9 kV/cm, and the enhanced energy-storage temperature stabilities from room temperature (RT) to more than 200 ℃ were demonstrated, and the oxygen defects mechanism and size effect were discussed. Moreover, the fast charging (~0.05 μs) and discharging (~0.15 μs) time were certified for the anti-ferroelectric PLSZT film capacitor. These findings broaden the horizon for PLSZT anti-ferroelectrics in high energy storage properties and show promising for manufacturing pulse power capacitor.
UR  - https://doi.org/10.1016/j.jmat.2020.12.012
DO  - 10.1016/j.jmat.2020.12.012