@article{Suen2022, 
author = {Chun Hung Suen and Long Zhang and Kunya Yang and M.Q. He and Y.S. Chai and K. Zhou and Huichao Wang and X.Y. Zhou and Ji-Yan Dai},
title = {High thermoelectric performance of ZrTe2/SrTiO3 heterostructure},
year = {2022},
journal = {Journal of Materiomics},
volume = {8},
number = {3},
pages = {570-576},
keywords = {Thermoelectric, ZrTe2 thin film, High mobility, Interface, Transition metal dichalcogenides},
url = {https://www.sciopen.com/article/10.1016/j.jmat.2021.12.004},
doi = {10.1016/j.jmat.2021.12.004},
abstract = {Achieving high thermoelectric performance in thin film heterostructures is essential for integrated and miniatured thermoelectric device applications. In this work, we demonstrate a mechanism and device performance of enhanced thermoelectric performance induced by interfacial effect in a transition metal dichalcogenides-SrTiO3 (STO) heterostructure. Owing to the formed conductive interface and elevated conductivity, the ZrTe2/STO heterostructure presents large thermoelectric power factor of 3.7 × 105 μWcm−1K−2 at 10 K. Formation of quasi-two-dimensional conductance at the interface is attributed for the large Seebeck coefficient and high electrical conductivity, leading to high thermoelectric performance which is demonstrated by a prototype device attaining 3 K cooling with 100 mA current input to this heterostructure. This superior thermoelectric property makes this heterostructure a promising candidate for future thermoelectric device.}
}