@article{Chen2023, 
author = {Yexin Chen and Qinghai Zhu and Xiaodong Zhu and Yijun Sun and Zhiyuan Cheng and Jing Xu and Mingsheng Xu},
title = {Gate-tunable high-performance broadband phototransistor array of two-dimensional PtSe2 on SOI},
year = {2023},
journal = {Nano Research},
volume = {16},
number = {5},
pages = {7559-7567},
keywords = {two-dimensional PtSe2, silicon-on-insulator (SOI), heterojunction, phototransistor, gate voltage modulation},
url = {https://www.sciopen.com/article/10.1007/s12274-022-5312-4},
doi = {10.1007/s12274-022-5312-4},
abstract = {Two-dimensional (2D) layered materials have attracted extensive research interest in the field of high-performance photodetection due to their high carrier mobility, tunable bandgap, stability, and other excellent properties. Herein, we propose a gate-tunable, high-performance, self-driving, and wide detection range phototransistor based on a 2D PtSe2 on silicon-on-insulator (SOI). Benefiting from the strong built-in electric field of the PtSe2/Si heterostructure, the phototransistor has a fast response time (rise/fall time) of 36.7/32.6 μs. The PtSe2/Si phototransistor exhibits excellent photodetection performance over a broad spectral range from ultraviolet to near-infrared, including a responsivity of 1.07 A/W and a specific detectivity of 6.60 × 109 Jones under 808 nm illumination at zero gate voltage. The responsivity and specific detectivity of PtSe2/Si phototransistor at 5 V gate voltage are increased to 13.85 A/W and 1.90 × 1010 Jones under 808 nm illumination. Furthermore, the fabricated PtSe2/Si phototransistor array shows excellent uniformity, reproducibility, and long-term stability in terms of photoresponse performance with negligible variation between pixel cells. The architecture of present PtSe2/Si on SOI platform paves a new way of a general strategy to realize high-performance photodetectors by combining the advantages of both 2D materials and conventional semiconductors which is compatible with current Si-complementary metal oxide semiconductor (CMOS) process.}
}