@article{Liu2023, 
author = {Huawei Liu and Lizhen Fang and Xiaoli Zhu and Chenguang Zhu and Xingxia Sun and Gengzhao Xu and Biyuan Zheng and Ying Liu and Ziyu Luo and Hui Wang and Chengdong Yao and Dong Li and Anlian Pan},
title = {Epitaxial van der Waals contacts for low schottky barrier MoS2 field effect transistors},
year = {2023},
journal = {Nano Research},
volume = {16},
number = {9},
pages = {11832-11838},
keywords = {mobility, heterojunction, Schottky barrier, transistors, van der Waals epitaxial},
url = {https://www.sciopen.com/article/10.1007/s12274-022-5229-y},
doi = {10.1007/s12274-022-5229-y},
abstract = {Small contact resistance and low Schottky barrier height (SBH) are the keys to energy-efficient electronics and optoelectronics. Two-dimensional (2D) semiconductors-based field effect transistors (FETs), holding great promise for next-generation information circuits, still suffer from poor contact quality at the metal–semiconductor junction interface, which severely hinders their further applications. Here, a novel contact strategy is proposed, where Bi2Te3 nanosheets with high conductivity were in-situ epitaxially grown on MoS2 as van der Waals contacts, which can effectively avoid the damage to MoS2 caused during the device manufacturing process, leading to a high-performance MoS2 FET. Moreover, the small work function difference between Bi2Te3 and MoS2 (Bi2Te3: 4.31 eV, MoS2: 4.37 eV, measured by Kelvin probe force microscopy (KPFM)), enables small band bending and Ohmic contact at the junction interface. Electrical characterizations indicate that the MoS2 FET device with Bi2Te3 contacts possesses a high current on/off ratio (5 × 107), large effective carrier mobility (90 cm2/(V·s)), and low flat-band SBH (60 meV), which is favorable as compared with MoS2 FET with traditional Cr/Au electrodes contacts, and superior to the vast majority of the reported chemical vapor deposition (CVD) MoS2-based FET device. The demonstration of epitaxial van der Waals Bi2Te3 contacts will facilitate the application of 2D MoS2 nanosheet in next-generation low-power consumption electronics and optoelectronics.}
}