@article{Liu2023, 
author = {Xiao Liu and Xiangshun Geng and Houfang Liu and Minghao Shao and Ruiting Zhao and Yi Yang and Tian-Ling Ren},
title = {Recent Progress and Applications of HfO2-Based Ferroelectric Memory},
year = {2023},
journal = {Tsinghua Science and Technology},
volume = {28},
number = {2},
pages = {221-229},
keywords = {ferroelectric memory, non-volatile memory, hafnium oxide, fluorite structure material},
url = {https://www.sciopen.com/article/10.26599/TST.2021.9010096},
doi = {10.26599/TST.2021.9010096},
abstract = {The discovery of ferroelectricity in hafnium oxide (HfO2) based thin films in 2011 renewed the interest in ferroelectrics. These new ferroelectrics possess completely different crystal morphology with conventional perovskite ferroelectrics, and present more robust ferroelectric properties upon aggressive scaling and compatibility with standard integrated circuit fabrication processes. In this article, we give a brief introduction to the conventional ferroelectric memories, then review the basic properties, recent progress, and memory applications of these HfO2-based ferroelectrics.}
}