@article{Ma2023, 
author = {Peipei Ma and Jun Zheng and Yabao Zhang and Zhi Liu and Yuhua Zuo and Buwen Cheng},
title = {Investigation on n-Type (–201) β-Ga2O3 Ohmic Contact via Si Ion Implantation},
year = {2023},
journal = {Tsinghua Science and Technology},
volume = {28},
number = {1},
pages = {150-154},
keywords = {β-Ga2O3, ohmic contact, ion implantation, annealing activation},
url = {https://www.sciopen.com/article/10.26599/TST.2021.9010039},
doi = {10.26599/TST.2021.9010039},
abstract = {Heavy doped n-type  β-Ga 2O 3 (HD-Ga 2O 3) was obtained by employing Si ion implantation technology on unintentionally doped  β-Ga 2O 3 single crystal substrates. To repair the Ga 2O 3 lattice damage and activate the Si after implantation, the implanted substrates were annealed at 950℃, 1000℃, and 1100℃, respectively. High-resolution X-ray diffraction and high-resolution transmission electron microscopy show that the ion-implanted layer has high lattice quality after high-temperature annealing at 1000℃. The minimum specific contact resistance is 9.2×10–5Ω·cm2, which is attributed to the titanium oxide that is formed at the Ti/Ga 2O 3 interface via rapid thermal annealing at 480℃. Based on these results, the lateral  β-Ga 2O 3 diodes were prepared, and the diodes exhibit high forward current density and low specific on-resistance.}
}