@article{Chen2023, 
author = {Xuexia Chen and Xun Yang and Qing Lou and Yongzhi Tian and Zhiyu Liu and Chaofan Lv and Yancheng Chen and Lin Dong and Chong-Xin Shan},
title = {Ultrasensitive broadband position-sensitive detector based on graphitic carbon nitride},
year = {2023},
journal = {Nano Research},
volume = {16},
number = {1},
pages = {1277-1285},
keywords = {heterojunction, graphitic carbon nitride (g-CN), position-sensitive detector (PSD), lateral photovoltaic effect (LPE), trajectory tracking, acoustic detection},
url = {https://www.sciopen.com/article/10.1007/s12274-022-4780-x},
doi = {10.1007/s12274-022-4780-x},
abstract = {As a typical two-dimensional material, graphitic carbon nitride (g-CN) has attracted great interest because of its distinctive electronic, optical, and catalytic properties. However, the absence of a feasible route toward large-area and high-quality films hinders its development in optoelectronics. Herein, high-quality g-CN films have been grown on Si substrate via a vapor-phase transport-assisted condensation method. The g-CN/Si heterojunction shows an obvious response to ultraviolet–visible-near infrared photons with a responsivity of 133 A·W−1, which is two orders of magnitude higher than the best value ever reported for g-CN photodetectors. A position-sensitive detector (PSD) has been developed using the lateral photovoltaic effect of the g-CN/Si heterojunction. The PSD shows a wide response spectrum ranging from 300 to 1,100 nm, and a position sensitivity and rise/decay time of 395 mV·mm−1 and 3.1/50 μs, respectively. Moreover, the application of the g-CN/Si heterojunction photodetector in trajectory tracking and acoustic detection has been realized for the first time. This work unveils the potential of g-CN for large-area photodetectors, and prospects for their applications in trajectory tracking and acoustic detection.}
}