@article{Sheng2023, 
author = {Zhe Sheng and Yue Wang and Wennan Hu and Haoran Sun and Jianguo Dong and Rui Yu and David Wei Zhang and Peng Zhou and Zengxing Zhang},
title = {Two-dimensional complementary gate-programmable PN junctions for reconfigurable rectifier circuit},
year = {2023},
journal = {Nano Research},
volume = {16},
number = {1},
pages = {1252-1258},
keywords = {two-dimensional (2D) material, PN junction, rectifier circuit, complementary configuration},
url = {https://www.sciopen.com/article/10.1007/s12274-022-4724-5},
doi = {10.1007/s12274-022-4724-5},
abstract = {The unique features of ambipolar two-dimensional materials open up a great opportunity to build gate-programmable devices for reconfigurable circuit applications, e.g., PN junctions for rectifier circuits. However, current-reported rectifier circuits usually consist of one gate-programmable PN junction as the rectifier and one resistor as the load, which are not conductive to voltage output and large-scale integration. Here we propose an approach of complementary gate-programmable PN junctions to assemble reconfigurable rectifier circuit, which include two symmetric back-to-back black phosphorus (BP)/hexagonal boron nitride (h-BN)/graphene heterostructured semi-gate field-effect transistors (FETs) and perform complementary NP and PN junction like complementary metal-oxide-semiconductor (CMOS) circuit. The investigation exhibits that the circuit can effectively reconfigure the circuit with/without rectifying ability, and can process alternating current (AC) signals with the frequency prior 1 KHz and reconfiguration speed up to 25 μs. We also achieve the reconfigurable rectifier circuit memory via complementary semi-floating gate FETs configuration. The complementary configuration here should be of low output impedance and low static power consumption, being beneficial for effective voltage output and large-scale integration.}
}